Download A First Lab in Circuits and Electronics by Yannis Tsividis PDF

By Yannis Tsividis

* Experiments are associated with genuine functions. scholars usually are and excited to profit extra and discover. instance of experiments associated with actual purposes may be obvious in test 2, steps 6, 7, 15, and sixteen; test five, steps 6 to ten and scan 7, steps 12 to 20.* Self-contained history to all electronics experiments. scholars should be in a position to stick to with no need taken an electronics path. encompasses a self-contained creation according to circuits in basic terms. For the teacher this gives flexibility as to whilst to run the lab. it might probably run at the same time with the 1st circuits research course.* assessment history sections are supplied. this useful textual content function presents another standpoint; is helping offer a uniform history for college students of alternative theoretical backgrounds.* A "touch-and-feel" technique is helping to supply instinct and to make issues "click". instead of taking into account the lab as a suite of uninteresting strategies, scholars get the concept what they're studying is real.* Encourages scholars to discover and to invite "what if" questions. is helping scholars turn into lively learners.* Introduces scholars to easy layout at a really early level. is helping scholars see the relevance of what they're studying, and to turn into energetic learners.* is helping scholars develop into tinkerers and to scan on their lonesome. scholars are inspired to develop into artistic, and their brain is opened to new probabilities. This additionally advantages their next specialist paintings and/or graduate learn.

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Extra resources for A First Lab in Circuits and Electronics

Example text

Transient circuit performance, power dissipation and layout area of an inverter, 2-input and 3-input NAND, NOR, XOR gates and full adder circuits are measured and analyzed. 15 ps/aF. 04 nW/aF. 11 μm2 which is 5 times smaller than a 6-transistor SRAM cell laid out using a 65 nm technology node. Compared to the results reported previously for silicon bulk and double-gated SOI transistors, this study indicates the silicon nanowire technology may be a potential choice for the future of VLSI circuits because of its low power dissipation in a compact layout area.

10. Pdyn ¼ fop:CL :VDD 2 ð1:10Þ Fig. 18 Worst-case postlayout power dissipation of various primitive gates built with 40 nm effective channel length and 4 nm body radius NMOS and PMOS nanowire transistors at 10 aF capacitive load Worst-case power dissipation at 10aF (nW) When VDD and fop are adjusted to achieve the optimum circuit performance and noise margin, the only possible variable to reduce Pdyn is the load capacitance. Even though the dimensions of a bulk transistor can be changed to have the same gate capacitance of a single nanowire transistor, impact ionization, punch-through effect, and high S/D capacitance are still potential problems for the bulk device.

Considering the gate capacitance of a single transistor is 32 aF, maximum output capacitance of 200 aF in simulations corresponds to a fan-out of approximately six identical transistors. The worst-case transient time is essentially equivalent to the rise time of a gate since a PMOS transistor has almost five times higher resistance compared to an NMOS transistor as discussed earlier. The worst-case transient times of the inverter, 2-input and 3-input NAND-gates in Fig. 16 overlap each other primarily due to 16 1 Dual Work Function Silicon Nanowire MOS Transistors Fig.

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