By Wai-Kai Chen
That includes countless numbers of illustrations and references, this quantity within the 3rd version of the Circuits and Filters guide, presents the newest info on analog and VLSI circuits, omitting vast conception and proofs in prefer of diverse examples all through every one chapter.
The first a part of the textual content makes a speciality of analog built-in circuits, providing updated wisdom on monolithic equipment types, analog circuit cells, excessive functionality analog circuits, RF verbal exchange circuits, and PLL circuits.
In the second one 1/2 the publication, recognized participants supply the newest findings on VLSI circuits, together with electronic platforms, information converters, and systolic arrays.
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Additional info for Analog and VLSI Circuits, 3rd Edition (The Circuits and Filters Handbook)
Unlike most digital networks, highperformance analog circuits are sensitive to speciﬁc values, or at least speciﬁc ranges of values, of several of the key physical and electrical parameters that effectively deﬁne the electrical properties of MOSFETs. Unfortunately, attaining the requisite accuracy in the numerical delineation of these parameters becomes Analog and VLSI Circuits 1-22 progressively more daunting as the performance metrics imposed on an analog network become more challenging and as device geometries scale to meet omnipresent quests for wider signal processing passbands.
60)(10À19) C is the magnitude of electron charge, and T is the absolute temperature of the semiconductor surface. 45)(1010) atoms=cm3 is the intrinsic carrier concentration of silicon at T ¼ 278C. 19 is established in response to an applied gate–bulk voltage, Vgb, or an applied gate– source voltage, Vgs. 52 of Qo(0) ¼ 0. 52 is premised on Poisson’s equation and the Boltzmann carrier relationship, p(0) ¼ NA eÀwo =VT , (1:58) where p(0) signiﬁes the hole concentration at the surface if complete ionization of substrate dopant atoms is tacitly presumed.
Because Vgs ! Vh and Vgd ! Vh, the electron inversion layer extends throughout the entire surface region from the source-to-the drain. But since Vgd ¼ (Vgs À Vds) and Vds > 0, the gate-to-drain bias, Vgd, is necessarily smaller than its gate-to-source counterpart, Vgs. It follows that the surface potential in the neighborhood of the drain region is smaller than that prevailing near the source region, whence the electron concentration near the drain is smaller than it is at the source. Accordingly, the channel of electrons depicted in the ﬁgure at hand does not have a uniform depth (y-direction) and is, in fact, deeper at the source site, where x ¼ 0, than it is at the drain site, which is typiﬁed analytically by x ¼ L.
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